HBN3101S6R Datasheet, PDF (2/6 Pages) Cystech Electonics Corp. – NPN Epitaxial Planar Transistor

CYStech Electronics Corp.
Spec. No. : C234S6R
Issued Date : 2013.10.21
Revised Date :
Page No. : 2/6
The following characteristics apply to both Tr1 and Tr2
Absolute Maximum Ratings (Ta=25°C)
Parameter
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current (DC)
Collector Current (Pulse)
Power Dissipation
Junction Temperature
Storage Temperature
Symbol
VCBO
VCEO
VEBO
IC
ICP
Pd
Tj
Tstg
Limits
Unit
300
V
300
V
5
V
100
mA
300 (Note 1)
mA
200 (total) (Note 2)
mW
150
°C
-55~+150
°C
Note : 1.Single pulse, Pw=10ms
2.150mW per element must not be exceeded.
Characteristics (Ta=25°C)
Symbol
BVCBO
BVCEO
BVEBO
ICBO
IEBO
*VCE(sat)
*VBE(sat)
*hFE1
*hFE2
fT
Cob
Min.
300
300
5
-
-
-
-
100
15
60
-
Typ.
-
-
-
-
-
-
-
-
-
-
-
Max.
-
-
-
100
100
300
900
250
-
-
15
Unit
V
V
V
nA
nA
mV
mV
-
-
MHz
pF
Test Conditions
IC=100µA
IC=1mA
IE=10µA
IE=0, VCB=300V
VEB=5V, IC=0
IC=30mA, IB=3mA
IC=30mA, IB=3mA
VCE=5V, IC=10mA
VCE=5V, IC=50mA
VCE=10V, IC=10mA, f=100MHz
VCB=10V, f=1MHz
*Pulse Test : Pulse Width ≤380μs, Duty Cycle≤2%
HBN3101S6R
CYStek Product Specification