BTPA56N3 Datasheet, PDF (3/8 Pages) Cystech Electonics Corp. – PNP Epitaxial Planar Transistor

CYStech Electronics Corp.
Spec. No. : C217N3
Issued Date : 2013.06.26
Revised Date :
Page No. : 3/8
Typical Characteristics
Emitter Grounded Output Characteristics
0.25
1mA
0.2
0.15
0.1
0.05
0
0
500uA
400uA
300uA
200uA
-IB=100uA
1
2
3
4
5
6
-VCE, Collector-to-Emitter Voltage(V)
0.7
0.6
0.5
0.4
0.3
0.2
0.1
0
0
Emitter Grounded Output Characteristics
5mA
2.5mA
1.5mA
1mA
-IB=500uA
1
2
3
4
5
6
-VCE, Collector-to-Emitter Voltage(V)
1
0.9
0.8
0.7
0.6
0.5
0.4
0.3
0.2
0.1
0
0
Emitter Grounded Output Characteristics
20mA
8mA
6mA
4mA
-IB=2mA
1
2
3
4
5
6
-VCE, Collector-to-Emitter Voltage(V)
1.4
1.2
1
0.8
0.6
0.4
0.2
0
0
Emitter Grounded Output Characteristics
50mA
25mA
10mA
-IB=5mA
1
2
3
4
5
6
-VCE, Collector-to-Emitter Voltage(V)
Current Gain vs Collector Current
1000
VCE=-1V
Current Gain vs Collector Current
1000
VCE=-2V
100 Ta=125°C
Ta= 75°C
Ta= 25°C
Ta=0°C
Ta=-40°C
10
0.1
1
10
100
-IC, Collector Current(mA)
1000
100
Ta=125°C
Ta=75°C
Ta=25°C
Ta=0°C
Ta=-40°C
10
0.1
1
10
100
-IC, Collector Current(mA)
1000
BTPA56N3
CYStek Product Specification