BTPA56N3 Datasheet, PDF (1/8 Pages) Cystech Electonics Corp. – PNP Epitaxial Planar Transistor

CYStech Electronics Corp.
PNP Epitaxial Planar Transistor
BTPA56N3
Spec. No. : C217N3
Issued Date : 2013.06.26
Revised Date :
Page No. : 1/8
Features
• Low VCE(sat), VCE(sat)=-0.07 V (typ), at IC / IB = -100mA / -10mA
• Excellent current gain characteristics
• Pb-free lead plating and halogen-free package
Symbol
BTPA56N3
Outline
SOT-23
B：Base
C：Collector
E：Emitter
Absolute Maximum Ratings (Ta=25°C)
Parameter
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current (DC)
Collector Current (Pulse)
Base Current
Power Dissipation
Power Dissipation
Operating Junction and Storage Temperature Range
Symbol
VCBO
VCEO
VEBO
IC
ICP
IB
PD
Tj ; Tstg
Limits
Unit
-80
-80
V
-5
-500
mA
-1 (Note 1)
A
-200
mA
0.225
W
0.35 (Note 2)
-65~+150
°C
BTPA56N3
CYStek Product Specification