BTNA45N3 Datasheet, PDF (3/7 Pages) Cystech Electonics Corp. – NPN High Voltage Planar Transistor

CYStech Electronics Corp.
Typical Characteristics
Spec. No. : C241N3
Issued Date : 2011.06.10
Revised Date :
Page No. : 3/7
0.07
0.06
0.05
0.04
0.03
0.02
0.01
0
0
Emitter Grounded Output Characteristics
1mA
500uA
400uA
300uA
200uA
IB=100uA
1
2
3
4
5
6
Collector-to-Emitter Voltage---VCE(V)
0.14
0.12
0.1
0.08
0.06
0.04
0.02
0
0
Emitter Grounded Output Characteristics
5mA
2.5mA
2mA
1.5mA
1mA
IB=500uA
1
2
3
4
5
6
Collector-to-Emitter Voltage---VCE(V)
Current Gain vs Collector Current
1000
Current Gain vs Collector Current
1000
Ta=125°C
100
Ta=125°C
Ta= 75°C
Ta= 25°C
10
1
0.1
VCE=1V
1
10
100
Collector Current---IC(mA)
Current Gain vs Collector Current
1000
Ta=125°C
100
Ta=25°C
Ta=75°C
10
0.1
VCE=10V
1
10
100
Collector Current---IC(mA)
100 _Ta=25°C ^Ta=75°C
1000
VCE=5V
10
0.1
1
10
100
Collector Current---IC(mA)
10000
Saturation Voltage vs Collector Current
VCESAT=10IB
1000
125°C
75°C
100
25°C
1000
10
1000
1
10
100
1000
Collector Current---IC(mA)
BTNA45N3
CYStek Product Specification ₃