BTNA45N3 Datasheet, PDF (1/7 Pages) Cystech Electonics Corp. – NPN High Voltage Planar Transistor

CYStech Electronics Corp.
NPN High Voltage Planar Transistor
BTNA45N3
BVCEO
IC
VCESAT
Spec. No. : C241N3
Issued Date : 2011.06.10
Revised Date :
Page No. : 1/7
500V
150mA
150mV (max)
Features
• High breakdown voltage. (BVCEO=500V)
• Low collector-emitter saturation voltage VCESAT.
• High collector current capability IC and ICM.
• High collector current gain HFE at high collector current IC.
• Low collector output capacitance. (Typ. 5pF at VCB =20V)
• Pb-free lead plating and halogen-free package.
Symbol
BTNA45N3
Outline
SOT-23
C
BE
Absolute Maximum Ratings (Ta=25°C)
Parameter
Symbol
Limits
Unit
Collector-Base Voltage
VCBO
500
Collector-Emitter Voltage
Collector-Emitter Voltage
VCES
500
V
VCEO
500
Emitter-Base Voltage
VEBO
7
Collector Current
IC
150
Peak Collector Current , single pulse, pulse width tp<1ms
ICM
500
mA
Peak Base Current, single pulse, pulse width tp<1ms
IBM
200
Power Dissipation (Note )
Pd
300
mW
Junction Temperature
Tj
150
°C
Storage Temperature
Tstg
-55~+150
°C
Note : Device mounted on a FR-4 PCB, single sided copper, tin plated and standard footprint.
BTNA45N3
CYStek Product Specification ₁