BTN13003T3 Datasheet, PDF (3/7 Pages) Cystech Electonics Corp. – General Purpose NPN Epitaxial Planar Transistor

CYStech Electronics Corp.
Spec. No. : C827T3
Issued Date : 2012.04.09
Revised Date :
Page No. : 3/7
Typical Characteristics
0.1
0.09
0.08
0.07
0.06
0.05
0.04
0.03
0.02
0.01
0
0
Emitter Grounded Output Characteristics
1mA
500uA
400uA
300uA
200uA
IB=100uA
1
2
3
4
5
6
Collector-to-Emitter Voltage---VCE(V)
0.8
0.7
0.6
0.5
0.4
0.3
0.2
0.1
0
0
Emitter Grounded Output Characteristics
35mA
20mA
15mA
10mA
IB=5mA
1
2
3
4
5
6
Collector-to-Emitter Voltage---VCE(V)
Current Gain vs Collector Current
1000
100
125℃
75℃
25℃
10
Current Gain vs Collector Current
1000
125℃
75℃
25℃
100
10
VCE=1V
1
1
10
100
1000
Collector Current---IC(mA)
10000
VCE=2V
1
1
10
100
1000
Collector Current---IC(mA)
10000
Current Gain vs Collector Current
1000
100
Saturation Voltage vs Collector Current
1000
VCESAT@IC=3IB
25℃
100
75℃
10
125℃
VCE=5V
1
10
100
1000
Collector Current---IC(mA)
10000
10
1
125℃
75℃
25℃
10
100
1000
Collector Current---IC(mA)
10000
BTN13003T3
CYStek Product Specification