BTN13003T3 Datasheet, PDF (2/7 Pages) Cystech Electonics Corp. – General Purpose NPN Epitaxial Planar Transistor

CYStech Electronics Corp.
Spec. No. : C827T3
Issued Date : 2012.04.09
Revised Date :
Page No. : 2/7
Characteristics (Ta=25°C)
Symbol
Min.
Typ.
Max.
Unit
Test Conditions
BVCBO
700
-
-
V
IC=100μA
BVCEO
450
-
-
V
IC=10mA
BVEBO
9
-
-
V
IE=100μA
ICBO
-
-
1
μA VCB=700V, IE=0
ICEO
-
-
50
μA VCE=400V, IE=0
IEBO
-
-
100
nA VEB=9V, IC=0
*VCE(SAT)
-
136
300
mV IC=500mA, IB=100mA
*VCE(SAT)
-
256
600
mV IC=1A, IB=250mA
*VCE(SAT)
-
400
800
V
IC=1.5A, IB=500mA
*VBE(SAT)
-
0.84
1
V
IC=500mA, IB=100mA
*VBE(SAT)
-
0.92
1.2
V
IC=1A, IB=250mA
*hFE 1
18
-
36
-
VCE=2V, IC=500mA
*hFE 2
5
-
21
-
VCE=2V, IC=1A
fT
5
-
-
MHz VCE=10V, IC=100mA, f=100MHz
tstg
tf
-
1.8
-
-
0.5
6.6
μs
VCC=100V, IC=1A, IB1=-IB2=0.2A,
IC=0.25A
*Pulse Test: Pulse Width ≤380μs, Duty Cycle≤2%
Ordering Information
Device
MJE13003T3
Package
TO-126
(Pb-free)
Shipping
200 pcs / Bag, 15 Bags/Box, 10 Boxes/Carton
Marking
13003
BTN13003T3
CYStek Product Specification