BTD2150AT3 Datasheet, PDF (3/4 Pages) Cystech Electonics Corp. – Low Vcesat NPN Epitaxial Planar Transistor

CYStech Electronics Corp.
Spec. No. : C848T3
Issued Date : 2004.07.01
Revised Date :
Page No. : 3/4
Grounded Emitter Output Characteristics
2500
2000
1500
1000
500
0
0
10mA
8mA
6mA
4mA
2mA
IB=0mA
1
2
3
4
5
6
Collector To Emitter Voltage---VCE(V)
3500
3000
2500
2000
1500
1000
500
0
0
Grounded Emitter Output Characteristics
25mA
20mA
15mA
10mA
5mA
IB=0mA
1
2
3
4
5
6
Collector To Emitter Voltage---VCE(V)
Current gain vs Collector current
1000
VCE=5V
100
VCE=2V
VCE=1V
10
1
10
100
1000
Collector current---IC(mA)
10000
Saturation voltage vs Collector current
1000
VCE(sat)
100
IC=40IB
10
1
1
IC=10IB
IC=20IB
10
100
1000
Collector current---IC(mA)
10000
10000
Saturation votlage vs Collector current
VBE(sat)@IC=10IB
1000
100
1
10
100
1000
Collector current---IC(mA)
10000
1.2
1
0.8
0.6
0.4
0.2
0
0
Power Derating Curve
50
100
150
200
Ambient Temperature---TA(℃)
BTD2150AT3
CYStek Product Specification