BTD2150AT3 Datasheet, PDF (1/4 Pages) Cystech Electonics Corp. – Low Vcesat NPN Epitaxial Planar Transistor

CYStech Electronics Corp.
Low Vcesat NPN Epitaxial Planar Transistor
BTD2150AT3
Features
• Low VCE(sat), VCE(sat)=0.25 V (typical), at IC / IB = 2A / 200mA
• Excellent current gain characteristics
• Complementary to BTB1424AT3
Spec. No. : C848T3
Issued Date : 2004.07.01
Revised Date :
Page No. : 1/4
Symbol
BTD2150AT3
Outline
TO-126
B：Base
C：Collector
E：Emitter
Absolute Maximum Ratings (Ta=25°C)
Parameter
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current (DC)
Collector Current (Pulse)
Power Dissipation (TA=25℃)
Power Dissipation (TC=25℃)
Junction Temperature
Storage Temperature
Symbol
VCBO
VCEO
VEBO
IC
ICP
PD
Tj
Tstg
Note : Pulse test, pulse width≤380µs, duty cycle≤2%.
BTD2150AT3
ECB
Limits
Unit
50
V
50
V
5
V
3
A
7 (Note)
1
W
10
150
°C
-55~+150
°C
CYStek Product Specification