BTD2150A3 Datasheet, PDF (3/5 Pages) Cystech Electonics Corp. – Low Vcesat NPN Epitaxial Planar Transistor

CYStech Electronics Corp.
Spec. No. : C848A3
Issued Date : 2005.02.04
Revised Date :2005.06.03
Page No. : 3/5
Grounded Emitter Output Characteristics
2500
2000
1500
1000
500
0
0
10mA
8mA
6mA
4mA
2mA
IB=0mA
1
2
3
4
5
6
Collector To Emitter Voltage---VCE(V)
3500
3000
2500
2000
1500
1000
500
0
0
Grounded Emitter Output Characteristics
25mA
20mA
15mA
10mA
5mA
IB=0mA
1
2
3
4
5
6
Collector To Emitter Voltage---VCE(V)
Current gain vs Collector current
1000
VCE=5V
100
VCE=2V
VCE=1V
Saturation voltage vs Collector current
1000
VCE(sat)
100
IC=40IB
10
IC=10IB
IC=20IB
10
1
10
100
1000
10000
Collector current---IC(mA)
1
1
10
100
1000
10000
Collector current---IC(mA)
Saturation votlage vs Collector current
10000
VBE(sat)@IC=10IB
1000
100
1
10
100
1000
Collector current---IC(mA)
10000
Power Derating Curve
800
700
600
500
400
300
200
100
0
0
50
100
150
200
Ambient Temperature --- Ta(℃ )
BTD2150A3
CYStek Product Specification