BTD2150A3 Datasheet, PDF (1/5 Pages) Cystech Electonics Corp. – Low Vcesat NPN Epitaxial Planar Transistor

CYStech Electronics Corp.
Low Vcesat NPN Epitaxial Planar Transistor
BTD2150A3
Features
• Low VCE(sat), typically 0.25V at IC / IB = 2A / 100mA
0.1V at IC / IB = 1A / 50mA
• Excellent current gain characteristics
• Complementary to BTB1424A3
• Pb-free package
Spec. No. : C848A3
Issued Date : 2005.02.04
Revised Date :2005.06.03
Page No. : 1/5
Symbol
BTD2150A3
Outline
TO-92
B：Base
C：Collector
E：Emitter
Absolute Maximum Ratings (Ta=25°C)
Parameter
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Power Dissipation
Junction Temperature
Storage Temperature
Note : *1. Single Pulse Pw≦350µs,Duty≦2%.
Symbol
VCBO
VCEO
VEBO
IC(DC)
IC(Pulse)
Pd
Tj
Tstg
BTD2150A3
ECB
Limit
Unit
80
V
50
V
6
V
3
A
7 (Note)
A
750
mW
150
°C
-55~+150
°C
CYStek Product Specification