BTD1857AM3 Datasheet, PDF (3/4 Pages) Cystech Electonics Corp. – Silicon NPN Epitaxial Planar Transistor

CYStech Electronics Corp.
Spec. No. : C855M3-R
Issued Date : 2004.08.06
Revised Date : 2005.01.14
Page No. : 3/4
Characteristic Curves
Current Gain vs Collector Current
1000
VCE=5V
Tj=125℃
Saturation Voltage vs Collector Current
1000
VCE(SAT)@IC=10IB
100
Tj=25℃
Tj=75℃
10
1
10
100
1000
Collector Current---IC(mA)
10000
Saturation Voltage vs Collector Current
1000
Tj=25℃
100
Tj=125℃
10
10
Tj=25℃
Tj=75℃
100
1000
Collector Current---IC(mA)
On Voltage vs Collector Current
1000
Tj=25℃
10000
Tj=75℃
Tj=125℃
Tj=75℃
Tj=125℃
100
1
VBE(SAT)@IC=10IB
10
100
1000
Collector Current---IC(mA)
10000
Safe Operationg Area
10
PT=1ms
1
PT=100ms
0.1
PT=1s
0.01
1
BTD1857AM3
10
100
Forward Voltage---VCE(V)
1000
100
1
VBE(ON)@VCE=5V
10
100
1000
Collector Current---IC(mA)
10000
Power Derating Curve
2.5
2
See Note 2 on page 1
1.5
See Note 1 on page 1
1
0.5
0
0
50
100
150
200
Case Temperature---TC(℃)
CYStek Product Specification