BTD1857AM3 Datasheet, PDF (2/4 Pages) Cystech Electonics Corp. – Silicon NPN Epitaxial Planar Transistor

CYStech Electronics Corp.
Spec. No. : C855M3-R
Issued Date : 2004.08.06
Revised Date : 2005.01.14
Page No. : 2/4
Thermal Characteristics
Parameter
Symbol
Thermal Resistance, Junction to Ambient
RθJA
Thermal Resistance, Junction to Case
RθJC
Note : 1. When mounted on FR-4 PCB with area measuring 10×10×1 mm
2 . When mounted on ceramic with area measuring 40×40×1 mm
Value
208
125 (Note 1)
62.5 (Note 2)
105
60
39.3
Unit
°C/W
°C/W
Characteristics (Ta=25°C)
Symbol
BVCBO
BVCEO
BVEBO
ICBO
IEBO
*VCE(sat)
*VBE(on)
hFE1
hFE2
fT
Cob
Min.
180
160
5
-
-
-
-
82
30
-
-
Typ.
-
-
-
-
-
-
-
-
-
140
27
Max.
-
-
-
1
1
0.6
1.5
320
-
-
-
Unit
V
V
V
µA
µA
V
V
-
-
MHz
pF
Test Conditions
IC=50µA, IE=0
IC=1mA, IB=0
IE=50µA, IC=0
VCB=160V, IE=0
VEB=4V, IC=0
IC=1A, IB=100mA
VCE=5V, IC=150mA
VCE=5V, IC=150mA
VCE=5V, IC=500mA
VCE=5V, IC=150mA
VCB=10V, IE=0, f=1MHz
*Pulse Test: Pulse Width ≤380µs, Duty Cycle≤2%
Classification of hFE 1
Rank
Range
P
82~190
Q
120~200
R
180~320
BTD1857AM3
CYStek Product Specification