BTC5706I3 Datasheet, PDF (3/5 Pages) Cystech Electonics Corp. – Low Vcesat NPN Epitaxial Planar Transistor

CYStech Electronics Corp.
Spec. No. : C819I3
Issued Date : 2004.12.16
Revised Date :
Page No. : 3/5
Characteristic Curves
Current Gain vs Collector Current
1000
Saturation Voltage vs Collector Current
10000
100
VCE=2V
VCE=1V
10
1
10
100
1000
Collector Current---IC(mA)
10000
10000
Saturation Voltage vs Collector Current
VBESAT@IC=50IB
1000
100
1
10000
10
100
1000
Collector Current---IC(mA)
10000
On Voltage vs Collector Current
VBEON@VCE=2V
1000
100
1
10
100
1000
Collector Current---IC(mA)
10000
1000
100
10
1
VCESAT@IC=50IB
VCESAT@IC=20IB
10
100
1000
Collector Current---IC(mA)
10000
Output Characteristics
6
100mA
5
4
50mA
30mA
3
20mA
10mA
2
IB=5mA
1
IB=0mA
0
0
1
2
3
4
5
6
Collector-to-Emitter Voltage---VCE(V)
0.9
0.8
0.7
0.6
0.5
0.4
0.3
0.2
0.1
0
0
Power Derating Curve
50
100
150
200
Ambient Temperature---TA(℃)
BTC5706I3
CYStek Product Specification