BTC5706I3 Datasheet, PDF (2/5 Pages) Cystech Electonics Corp. – Low Vcesat NPN Epitaxial Planar Transistor

CYStech Electronics Corp.
Spec. No. : C819I3
Issued Date : 2004.12.16
Revised Date :
Page No. : 2/5
Absolute Maximum Ratings (Ta=25°C)
Parameter
Collector-Base Voltage
Collector-Emitter Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current (DC)
Collector Current (Pulse)
Base Current
Power Dissipation @ TA=25℃
Power Dissipation @ TC=25℃
Thermal Resistance, Junction to Ambient
Thermal Resistance, Junction to Case
Junction Temperature
Storage Temperature
Symbol
Limits
Unit
VCBO
VCES
VCEO
VEBO
IC
ICP
IB
PD
PD
RθJA
RθJC
Tj
Tstg
80
80
60
6
5
7.5 (Note 1)
1.2
0.8
15
156
8.33
150
-55~+150
V
V
V
V
A
A
W
°C/W
°C/W
°C
°C
Note : 1. Single Pulse , Pw≦380µs,Duty≦2%.
Characteristics (Ta=25°C)
Symbol
BVCBO
BVCES
*BVCEO
BVEBO
ICBO
IEBO
*VCE(sat) 1
*VCE(sat) 2
*VBE(sat)
*hFE
fT
Cob
ton
tstg
tf
Min.
80
80
60
6
-
-
-
-
-
200
-
-
-
-
-
Typ.
-
-
-
-
-
-
110
200
0.89
-
400
15
35
300
20
Max.
-
-
-
-
1
1
135
240
1.2
560
-
-
-
-
-
Unit
V
V
V
V
µA
µA
mV
mV
V
-
MHz
pF
ns
ns
ns
Test Conditions
IC=10µA, IE=0
IC=100µA, RBE=0
IC=1mA, IB=0
IC=10µA, IC=0
VCB=80V, IE=0
VEB=4V, IC=0
IC=1A, IB=50mA
IC=2A, IB=100mA
IC=2A, IB=100mA
VCE=2V, IC=500mA
VCE=10V, IC=500mA
VCB=10V, f=1MHz
VCC=25V, IC=10IB1=-10IB2=1A,
RL=25Ω
*Pulse Test : Pulse Width ≤380µs, Duty Cycle≤2%
BTC5706I3
CYStek Product Specification