BTB4110D3 Datasheet, PDF (3/5 Pages) Cystech Electonics Corp. – Low Vcesat PNP Epitaxial Planar Transistor

CYStech Electronics Corp.
Spec. No. : C815D3
Issued Date : 2011.03.25
Revised Date :
Page No. : 3/5
Characteristic Curves
Current Gain vs Collector Current
1000
VCE=2V
10000
Saturation Voltage vs Collector Current
VCESAT
1000
IC=100IB IC=40IB IC=50IB
100
VCE=1V
100
10
1
10
100
1000
Collector Current---IC(mA)
10000
10000
Saturation Voltage vs Collector Current
VBESAT@IC=10IB
1000
100
1
9
8
7
6
5
4
3
2
1
0
0
10
100
1000
Collector Current---IC(mA)
Output Characteristics
10000
IB=50mA
IB=25mA
IB=20mA
IB=15mA
IB=10mA
IB=5mA
IB=0
1
2
3
4
5
6
Collector-to-Emitter Voltage---VCE(V)
10
1
IC=30IB
10
100
1000
Collector Current---IC(mA)
10000
5
4.5
4
3.5
3
2.5
2
1.5
1
0.5
0
0
Output Characteristics
IB=20mA
IB=10mA
IB=6mA
IB=4mA
IB=2mA
IB=0
2
4
6
Collector-to-Emitter Voltage---VCE(V)
16
14
12
10
8
6
4
2
0
0
Power Derating Curves
No heat sink
50
100
150
200
Ambient Temperature---TA(℃)
BTB4110D3
CYStek Product Specification