BTB4110D3 Datasheet, PDF (2/5 Pages) Cystech Electonics Corp. – Low Vcesat PNP Epitaxial Planar Transistor

CYStech Electronics Corp.
Spec. No. : C815D3
Issued Date : 2011.03.25
Revised Date :
Page No. : 2/5
Thermal Data
Parameter
Thermal Resistance, Junction-to-case, max
Thermal Resistance, Junction-to-ambient, max
Symbol
Rth,j-c
Rth,j-a
Value
10.4
83.3
Unit
°C/W
°C/W
Characteristics (Ta=25°C)
Symbol
Min.
Typ.
BVCBO
BVCEO
BVEBO
ICBO
IEBO
*VCE(sat)
*VCE(sat)
*RCE(sat)
*VBE(sat)
*VBE(on)
*hFE
*hFE
fT
Cob
-40
-
-20
-
-8
-
-
-
-
-
-
-0.25
-
-0.3
-
75
-
-1.0
-
-
180
-
80
-
-
120
-
60
Max.
-
-
-
-100
-100
-0.4
-0.5
125
-1.3
-1.5
390
-
-
-
Unit
V
V
V
nA
nA
V
V
mΩ
V
V
-
-
MHz
pF
Test Conditions
IC=-50μA, IE=0
IC=-1mA, IB=0
IE=-50μA, IC=0
VCB=-40V, IE=0
VEB=-8V, IC=0
IC=-3A, IB=-60mA
IC=-4A, IB=-0.1A
IC=-4A, IB=-0.1A
IC=-3A, IB=-60mA
VCE=-2V, IC=-4A
VCE=-2V, IC=-0.5A
VCE=-2V, IC=-4A
VCE=-6V, IC=-50mA, f =30MHz
VCB=-20V, f =1MHz
*Pulse Test : Pulse Width ≤380μs, Duty Cycle≤2%
Ordering Information
Device
BTB4110D3
Package
TO-126ML
(Pb-free lead plating package)
Shipping
200 pcs / bag, 15 bags/box, 10 boxes/carton
BTB4110D3
CYStek Product Specification