MTN2572E3 Datasheet, PDF (2/7 Pages) Cystech Electonics Corp. – N-Channel Enhancement Mode Power MOSFET

CYStech Electronics Corp.
Note : 1. Pulse width limited by maximum junction temperature
2. Duty cycle ≤ 1%
Spec. No. : C434E3
Issued Date : 2012.12.04
Revised Date :
Page No. : 2/7
Thermal Data
Parameter
Thermal Resistance, Junction-to-case, max
Thermal Resistance, Junction-to-ambient, max
Symbol
Rth,j-c
Rth,j-a
Value
0.96
62.5
Unit
°C/W
Characteristics (TC=25°C, unless otherwise specified)
Symbol
Min.
Typ.
Max.
Unit Test Conditions
Static
BVDSS
150
∆BVDSS/∆Tj
-
VGS(th)
1.5
GFS
-
IGSS
-
IDSS
-
-
*RDS(ON)
-
Dynamic
*Qg
-
*Qgs
-
*Qgd
-
*td(ON)
-
*tr
-
*td(OFF)
-
*tf
-
Ciss
-
Coss
-
Crss
-
Rg
-
Source-Drain Diode
*IS
-
*ISM
-
*VSD
-
*trr
-
*Qrr
-
-
0.1
2.8
34
-
-
-
33
30
10
8
13
12
47
20
2249
225
118
2
-
-
-
120
380
-
-
4.0
-
±100
1
25
50
-
-
-
-
-
-
-
-
-
-
-
36
120
1.3
-
-
V
V/°C
V
S
nA
μA
mΩ
VGS=0V, ID=250μA
Reference to 25°C, ID=1mA
VDS = VGS, ID=250μA
VDS =5V, ID=20A
VGS=±30
VDS =120V, VGS =0V
VDS =100V, VGS =0V, Tj=125°C
VGS =10V, ID=20A
nC
ID=20A, VDS=80V, VGS=10V
ns
VDS=75V, ID=1A, VGS=10V,
RG=6Ω
pF
VGS=0V, VDS=25V, f=1MHz
Ω
VGS=15mV, VDS=0V, f=1MHz
A
V
IF=IS, VGS=0V
ns
nC
IF=25A, VGS=0, dIF/dt=100A/μs
*Pulse Test : Pulse Width ≤300μs, Duty Cycle≤2%
Ordering Information
Device
Package
Shipping
MTN2572E3-0-UB-S
TO-220
(Pb-free lead plating and RoHS compliant package)
50 pcs/tube, 20 tubes/box,
4 boxes / carton
MTN2572E3
CYStek Product Specification