MTN2572E3 Datasheet, PDF (1/7 Pages) Cystech Electonics Corp. – N-Channel Enhancement Mode Power MOSFET

CYStech Electronics Corp.
Spec. No. : C434E3
Issued Date : 2012.12.04
Revised Date :
Page No. : 1/7
N-Channel Enhancement Mode Power MOSFET
MTN2572E3
BVDSS
ID
Features
• Low Gate Charge
• Simple Drive Requirement
• Repetitive Avalanche Rated
• Fast Switching Characteristic
• Pb-free lead plating and RoHS compliant package
RDS(ON)
150V
44A
33mΩ(typ.)
Symbol
MTN2572E3
Outline
TO-220
G：Gate
D：Drain
S：Source
G DS
Absolute Maximum Ratings (TC=25°C, unless otherwise noted)
Parameter
Symbol
Limits
Unit
Drain-Source Voltage
Gate-Source Voltage
VDS
150
V
VGS
±30
Continuous Drain Current @VGS=10V, TC=25°C
ID
44
Continuous Drain Current @VGS=10V, TC=100°C
ID
Pulsed Drain Current
(Note 1)
IDM
31
A
120
Avalanche Current
IAS
18
Avalanche Energy @ L=0.1mH, ID=20A, RG=25Ω
EAS
Repetitive Avalanche Energy@ L=0.05mH
(Note 2)
EAR
20
mJ
10
Total Power Dissipation (TC=25℃)
Total Power Dissipation (TC=100℃)
156
PD
W
78
Operating Junction and Storage Temperature
Tj, Tstg
-55~+175
°C
MTN2572E3
CYStek Product Specification