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MTB55N03N3 Datasheet, PDF (2/7 Pages) Cystech Electonics Corp. – 30V N-Channel Logic Level Enhancement Mode MOSFET
CYStech Electronics Corp.
Spec. No. : C723N3
Issued Date : 2009.06.12
Revised Date :
Page No. : 2/7
Electrical Characteristics (TA=25°C, unless otherwise specified)
Symbol
Min.
Typ.
Max.
Static
BVDSS
VGS(th)
IGSS
IDSS
IDON 1
30
-
-
1
1.5
3
-
-
±100
-
-
1
-
-
10
3.5
-
-
*RDS(ON) 1
*GFS 1
-
45
55
-
65
85
-
5
-
Dynamic
Ciss
-
319
-
Coss
-
66
-
Crss
-
53
-
*td(ON) 1 2
-
8
-
*tr 1 2
-
2.5
-
*td(OFF) 1 2
-
20
-
*tf 1 2
-
5
-
*Qg 1 2
-
6
-
*Qgs 1 2
-
0.8
-
*Qgd 1 2
-
1.8
-
Source-Drain Diode
IS
-
ISM 3
-
VSD 1
-
-
2
-
8
-
1.2
1 Pulse test : Pulse width≤300μs, Duty cycle≤2%
2 Independent of operating temperature
3 Pulse width limited by maximum junction temperature
Unit
Test Conditions
V
VGS=0, ID=250μA
V
VDS=VGS, ID=250μA
nA VGS=±20V, VDS=0
μA VDS=24V, VGS=0
μA VDS=20V, VGS=0, Tj=125°C
A
VDS=5V, VGS=10V
mΩ ID=3.5A, VGS=10V
ID=2A, VGS=4.5V
S
VDS=5V, ID=3.5A
pF VDS=10V, VGS=0, f=1MHz
ns
VDS=10V, ID=1A,VGS=10V,
RG=6Ω
nC VDS=10V, ID=3.5A, VGS=4.5V
A
V
IF=IS, VGS=0V
Ordering Information
Device
MTB55N03N3
Package
SOT-23
(Pb-free)
Shipping
3000 pcs / Tape & Reel
Marking
10
MTB55N03N3
CYStek Product Specification