MTB55N03N3 Datasheet, PDF (1/7 Pages) Cystech Electonics Corp. – 30V N-Channel Logic Level Enhancement Mode MOSFET

CYStech Electronics Corp.
Spec. No. : C723N3
Issued Date : 2009.06.12
Revised Date :
Page No. : 1/7
30V N-Channel Logic Level Enhancement Mode MOSFET
MTB55N03N3
BVDSS
RDSON(Max)
ID
30V
55mΩ
3.5A
Features
• VDS=30V
RDS(ON)=55mΩ@VGS=10V, ID=3.5A
RDS(ON)=85mΩ@VGS=4.5V, ID=2A
• Lower gate charge
• Pb-free lead plating and Halogen-free package
Equivalent Circuit
MTB55N03N3
Outline
SOT-23
D
G：Gate
S：Source
D：Drain
S
G
Absolute Maximum Ratings (Tc=25°C, unless otherwise noted)
Parameter
Symbol
Limits
Drain-Source Voltage
VDS
30
Gate-Source Voltage
VGS
±20
TA=25°C
3.5
Continuous Drain Current
TA=70°C
ID
2.4
Pulsed Drain Current
Power Dissipation
IDM
TA=25°C
TA=70°C
PD
14 (Note 1 & 2)
1.5 (Note 3)
1 (Note 3)
Thermal Resistance, Junction to Ambient
Rth, j-a
100 (Note 3)
Operating Junction and Storage Temperature
Tj, Tstg
-55 ~ +175
Note : 1. Pulse width limited by maximum junction temperature
2. Duty cycle ≤ 1%
3. Surface mounted on 1 in² copper pad of FR4 board; 270°C/W when mounted on min. copper pad
Unit
V
V
A
A
W
°C/W
°C
MTB55N03N3
CYStek Product Specification