HBNP1268Q8 Datasheet, PDF (2/8 Pages) Cystech Electonics Corp. – General Purpose NPN / PNP Epitaxial Planar Transistors

CYStech Electronics Corp.
Spec. No. : C198Q8
Issued Date : 2010.11.29
Revised Date :
Page No. : 2/8
Absolute Maximum Ratings (Each transistor, Ta=25°C)
Parameter
Symbol
Limits
NPN
PNP
Collector-Base Voltage
VCBO
80
-30
Collector-Emitter Voltage
VCEO
50
-30
Emitter-Base Voltage
VEBO
6
-5
Collector Current (DC)
IC
4
-5
Collector Current (Pulse)
(Note 1)
ICM
7
-7
Total Power Dissipation
(Note 2)
Pd
1.38
Linear Derating Factor
0.01
Operating Junction and Storage Temperature Range
Tj ; Tstg
-55~+150
Thermal Resistance, Junction-to-Ambient (Note 2)
Rth,ja
90
Note : 1. Pulse width≤300μs, duty cycle≤2%.
2. Surface mounted on 1 in² copper pad of FR-4 board; 135°C/W when mounted on minimum copper pad.
Unit
V
A
A
W
W / °C
°C
°C/W
Characteristics (Tj=25°C, unless otherwise specified)
NPN 1 & NPN 2
Symbol
Min.
Typ.
Max.
Unit Test Conditions
BVCBO
80
-
-
V
IC=100μA, IE=0
BVCEO
50
-
-
V
IC=1mA, IB=0
BVEBO
6
-
-
V
IE=50μA, IC=0
ICBO
-
-
100
nA
VCB=80V, IE=0
ICEO
-
-
1
μA
VCE=50V, IB=0
IEBO
-
-
100
nA
VEB=6V, IC=0
*VCE(SAT)
-
-
100
mV IC=400mA, IB=20mA
*VCE(SAT)
-
-
0.25
V
IC=1A, IB=10mA
*VCE(SAT)
-
0.25
0.5
V
IC=2A, IB=100mA
*RCE(SAT)
-
0.125
0.25
Ω
IC=2A, IB=100mA
*VBE(SAT)
-
-
1.5
V
IC=2A, IB=200mA
*hFE1
250
-
-
-
VCE=2V, IC=100mA
*hFE2
280
-
600
-
VCE=2V, IC=500mA
*hFE3
100
-
-
-
VCE=2V, IC=1A
fT
-
90
-
MHz VCE=5V, IC=0.1A, f=100MHz
Cob
-
13
-
pF
VCB=10V, f=1MHz
HBNP1268Q8
CYStek Product Specification