HBN3904S6R_17 Datasheet, PDF (2/7 Pages) Cystech Electonics Corp. – Dual General Purpose NPN Transistors

CYStech Electronics Corp.
Spec. No. : C228S6R
Issued Date : 2003.04.11
Revised Date : 2017.08.11
Page No. : 2/7
The following characteristics apply to both Tr 1 and Tr 2
Absolute Maximum Ratings (Ta=25°C)
Parameter
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Total Package Dissipation@TA=25℃
Operating Junction Temperature Range
Storage Temperature Range
Symbol
VCBO
VCEO
VEBO
IC
PD
Tj
Tstg
Limits
Unit
60
V
40
V
6
V
200
mA
200 (Note 1)
mW
-55~+150
°C
-55~+150
°C
Note 1:Device mounted on a FR-4 glass epoxy PCB with area measuring 1.0×0.75×0.062in. 150mW per element can’t be exceeded.
Characteristics (Ta=25°C)
Symbol
BVCBO
BVCEO
BVEBO
ICBO
ICEX
IEBO
VCE(sat)
VCE(sat)
VBE(sat)
VBE(sat)
hFE
hFE
hFE
hFE
*hFE
fT
Cob
Min.
60
40
6
-
-
-
-
-
-
-
40
70
100
60
30
-
-
Typ.
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
300
-
Max.
-
-
-
100
50
100
0.2
0.3
0.85
0.95
-
-
300
-
-
-
4
Unit
V
V
V
nA
nA
nA
V
V
V
V
-
-
-
-
-
MHz
pF
Test Conditions
IC=10μA
IC=1mA
IE=10μA
VCB=50V
VCE=30V, VEB=3V
VEB=5V
IC=10mA, IB=1mA
IC=50mA, IB=5mA
IC=10mA, IB=1mA
IC=50mA, IB=5mA
VCE=1V, IC=100μA
VCE=1V, IC=1mA
VCE=1V, IC=10mA
VCE=1V, IC=50mA
VCE=1V, IC=100mA
VCE=20V, IC=10mA, f=100MHz
VCB=5V, f=1MHz
*Pulse Test: Pulse Width ≤380us, Duty Cycle≤2%
HBN3904S6R
CYStek Product Specification