HBN2515S6R Datasheet, PDF (2/6 Pages) Cystech Electonics Corp. – Low Vcesat NPN Epitaxial Planar Transistor

CYStech Electronics Corp.
Spec. No. : C223S6-A
Issued Date : 2007.07.18
Revised Date :2011.02.22
Page No. : 2/6
Characteristics (Ta=25°C)
Symbol
Min.
Typ.
Max.
Unit
Test Conditions
BVCBO
20
-
-
V
IC=100μA, IE=0
BVCEO
15
-
-
V
IC=2mA, IB=0
BVEBO
6
-
-
V
IE=100μA, IC=0
ICBO
-
-
100
nA VCB=15V, IE=0
IEBO
-
-
100
nA VEB=6V, IC=0
*VCE(sat)1
-
-
25
mV IC=10mA, IB=0.5mA
*VCE(sat)2
-
-
150
mV IC=200mA, IB=10mA
*VCE(sat)3
-
*RCE(sat)
-
-
250
mV IC=500mA, IB=50mA
-
500
mΩ IC=500mA, IB=50mA
*VBE(sat)
-
-
1.1
V
IC=500mA, IB=50mA
*VBE(on)
-
-
0.9
V
VCE=2V, IC=100mA
*hFE1
160
-
-
-
VCE=1V, IC=10mA
*hFE2
180
-
560
-
VCE=1V, IC=100mA
*hFE3
150
-
-
-
VCE=1V, IC=500mA
fT
100
300
-
MHz VCE=10V, IC=50mA, f=100MHz
Cob
-
6.5
-
pF VCB=10V, f=1MHz
*Pulse Test : Pulse Width ≤380μs, Duty Cycle≤2%
Ordering Information
Device
HBN2515S6R
Package
SOT-363
(Pb-free)
Shipping
3000 pcs / Tape & Reel
Marking
BS
HBN2515S6R
CYStek Product Specification