HBN2515S6R Datasheet, PDF (1/6 Pages) Cystech Electonics Corp. – Low Vcesat NPN Epitaxial Planar Transistor

CYStech Electronics Corp.
Low Vcesat NPN Epitaxial Planar Transistor
HBN2515S6R
(Dual Transistors)
Spec. No. : C223S6-A
Issued Date : 2007.07.18
Revised Date :2011.02.22
Page No. : 1/6
Features
• Two BTD2515 chips in a SOT-363 package.
• Mounting possible with SOT-323 automatic mounting machines.
• Transistor elements are independent, eliminating interference.
• Mounting cost and area can be cut in half.
• Low VCE(sat), VCE(sat)=25mV (max), at IC / IB = 10mA / 0.5mA.
• Weight : 9.1mg, approximately.
• Pb-free package.
Equivalent Circuit
HBN2515S6R
Outline
SOT-363
Tr1
Tr2
The following characteristics apply to both Tr1 and Tr2
Absolute Maximum Ratings (Ta=25°C)
Parameter
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current (DC)
Collector Current (Pulse)
Power Dissipation
Junction Temperature
Storage Temperature
Symbol
VCBO
VCEO
VEBO
IC
ICP
Pd
Tj
Tstg
Limits
Unit
20
V
15
V
6
V
800
mA
1.5 (Note 1)
A
200 (total) (Note 2)
mW
150
°C
-55~+150
°C
Note : 1.Single pulse, Pw=10ms
2.150mW per element must not be exceeded.
HBN2515S6R
CYStek Product Specification