HBN2412S6R Datasheet, PDF (2/5 Pages) Cystech Electonics Corp. – General Purpose NPN Epitaxial Planar Transistors (dual transistors)

CYStech Electronics Corp.
Spec. No. : C202S6R
Issued Date : 2003.06.11
Revised Date : 2006.01.19
Page No. : 2/5
Characteristics (Ta=25°C)
Symbol
BVCBO
BVCEO
BVEBO
ICBO
IEBO
VCE(sat)
VBE(sat)
hFE
hFE
fT
Cob
Min.
60
40
6
-
-
-
-
200
25
300
-
Typ.
-
-
-
-
-
-
-
-
-
-
-
Max.
-
-
-
100
100
0.3
1
560
-
-
4
Unit
V
V
V
nA
nA
V
V
-
-
MHz
pF
Test Conditions
IC=100µA
IC=1mA
IE=50µA
VCB=60V
VEB=5V
IC=100mA, IB=10mA
IC=100mA, IB=10mA
VCE=6V, IC=1mA
VCE=6V, IC=150mA
VCE=20V, IC=10mA, f=100MHz
VCB=5V, f=1MHz
*Pulse Test: Pulse Width ≤380µs, Duty Cycle≤2%
Ordering Information
Device
HBN2412S6R
Package
SOT-363
(Pb-free)
Shipping
3000 pcs / Tape & Reel
Marking
MA
HBN2412S6R
CYStek Product Specification