HBN2412S6R Datasheet, PDF (1/5 Pages) Cystech Electonics Corp. – General Purpose NPN Epitaxial Planar Transistors (dual transistors)

CYStech Electronics Corp.
General Purpose NPN Epitaxial Planar Transistors
(dual transistors)
HBN2412S6R
Spec. No. : C202S6R
Issued Date : 2003.06.11
Revised Date : 2006.01.19
Page No. : 1/5
Features
• Two BTC2412 chips in a SOT-363R package.
• Mounting possible with SOT-323 automatic mounting machines.
• Transistor elements are independent, eliminating interference.
• Mounting cost and area can be cut in half.
• Low Cob. Typ. Cob=2.0pF
• Complementary to HBP1037S6R
• Pb-free package
Equivalent Circuit
HBN2412S6R
Outline
SOT-363R
Tr1
Tr2
The following characteristics apply to both Tr1 and Tr2
Absolute Maximum Ratings (Ta=25°C)
Parameter
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Power Dissipation
Junction Temperature
Storage Temperature
Symbol
VCBO
VCEO
VEBO
IC
Pd
Tj
Tstg
Limits
Unit
60
V
40
V
6
V
200
mA
200(total) (Note)
mW
150
°C
-55~+150
°C
Note : 150mW per element must not be exceeded.
HBN2412S6R
CYStek Product Specification