DAN202S3 Datasheet, PDF (2/4 Pages) Cystech Electonics Corp. – High-speed double diode

CYStech Electronics Corp.
Absolute Maximum Ratings @TA=25℃
Spec. No. : C303S3N
Issued Date : 2003.06.10
Revised Date
Page No. : 2/4
Parameters
Repetitive peak reverse voltage
Continuous reverse voltage
Continuous forward current(single diode loaded)
Continuous forward current(double diode loaded)
Repetitive peak forward current
Non-repetitive peak forward current
@square wave, Tj=125℃ prior to surge t=1µs
Total power dissipation(Note 1)
Junction Temperature
t=1ms
t=1s
Storage Temperature
Note 1: Device mounted on an FR-4 PCB.
Symbol
Min
Max Unit
V_RRM
-
85
V
VR
-
75
V
I_F
-
-
215
125
mA
IFRM
450 mA
IFSM
-
-
4
A
1
A
-
0.5
A
Ptot
200 mW
T_j
-
150
°C
T_stg
-65
+150 °C
Electrical Characteristics @ Tj=25℃ unless otherwise specified
Parameters
Forward voltage
Reverse current
Diode capacitance
Reverse recovery time
Forward recovery voltage
Symbol
Conditions
Min Typ. Max Unit
IF=1mA
VF
IF=10mA
IF=50mA
IF=150mA
VR=25V
VR=75V
IR
VR=25V,Tj=150℃
VR=75V,Tj=150℃
715 mV
-
-
855 mV
1V
1.25 V
30 nA
-
-
2.5 µA
60 µA
100 µA
Cd
VR=0V, f=1MHz
- - 1.5 pF
when switched from IF=10mA to
trr
IR=10mA,RL=100Ω, measured -
-
4 ns
at IR=1mA
Vfr
when switched from IF=10mA
tr=20ns
-
- 1.75 V
Thermal Characteristics
Symbol
Rth, j-a
Parameter
thermal resistance from junction to ambient
Note 1: Device mounted on an FR-4 PCB.
Conditions Value
Note 1
625
Unit
℃/W
DAN202S3
CYStek Product Specification