BU941ZF3 Datasheet, PDF (2/6 Pages) Cystech Electonics Corp. – NPN Epitaxial Planar Transistor

CYStech Electronics Corp.
Spec. No. : C660F3
Issued Date : 2010.10.01
Revised Date : 2014.02.13
Page No. : 2/6
Absolute Maximum Ratings (Ta=25°C)
Parameter
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Base Current
Power Dissipation
Thermal Resistance, Junction to
Ambient
Thermal Resistance, Junction to Case
Junction Temperature
Storage Temperature
Note : *1. Single Pulse Pw=10ms
Symbol
VCBO
VCEO
VEBO
IC(DC)
IC(Pulse)
IB(DC)
IB(Pulse)
Pd(TA=25℃)
Pd(TC=25℃)
RθJA
RθJC
Tj
Tstg
Limits
350
350
5
15
30 *1
1
5
*1
2
150
75
1
175
-65~+175
Unit
V
V
V
A
A
W
°C/W
°C/W
°C
°C
Characteristics (Ta=25°C)
Symbol
BVCBO
BVCEO
ICEO
ICBO
IEBO
*VCE(sat) 1
*VCE(sat) 2
*VCE(sat) 3
*VBE(sat) 1
*VBE(sat) 2
*VFEC
*hFE 1
*hFE 2
Min.
350
350
-
-
-
-
-
-
-
-
-
1100
800
Typ.
-
-
-
-
-
-
-
-
-
-
-
-
-
Max.
450
450
100
100
10
1.6
1.5
1.6
2.2
2.5
1.6
2400
-
Unit
Test Conditions
V
IC=1mA, IE=0
V
IC=100mA, IB=0
μA VCE=350V, IE=0
μA VCB=350V, IE=0
mA VEB=5V, IC=0
V
IC=6A, IB=10mA
V
IC=8A, IB=100mA
V
IC=10A, IB=250mA
V
IC=8A, IB=100mA
V
IC=10A, IB=250mA
V
IC=10A
-
VCE=10V, IC=5A
-
VCE=10V, IC=8A
*Pulse Test : Pulse Width ≤300μs, Duty Cycle≤2%
BU941ZF3
CYStek Product Specification