BTN6517A3 Datasheet, PDF (2/4 Pages) Cystech Electonics Corp. – High Voltage NPN Epitaxial Planar Transistor

CYStech Electronics Corp.
Spec. No. : C231A3
Issued Date : 2003.04.12
Revised Date :
Page No. : 2/4
Characteristics (Ta=25°C)
Symbol
Min.
Typ.
BVCBO
350
-
BVCEO
350
-
BVEBO
6
-
ICBO
-
-
IEBO
-
-
VCE(sat) 1
-
-
VCE(sat) 2
-
-
*VCE(sat) 3 -
-
*VCE(sat) 4 -
-
VBE(sat) 1
-
-
VBE(sat) 2
-
-
*VBE(sat) 3 -
-
VBE(on)
-
-
hFE 1
20
-
hFE 2
30
-
*hFE 3
30
-
*hFE 4
20
-
*hFE 5
15
-
fT
40
-
Cob
-
-
Max.
-
-
-
50
50
0.3
0.35
0.5
1.0
0.75
0.85
0.9
2
-
-
200
200
-
200
6
Unit
V
V
V
nA
nA
V
V
V
V
V
V
V
V
-
-
-
-
-
MHz
pF
Test Conditions
IC=100μA
IC=1mA
IE=10μA
VCB=250V
VEB=5V
IC=10mA, IB=1mA
IC=20mA, IB=2mA
IC=30mA, IB=3mA
IC=50mA, IB=5mA
IC=10mA, IB=1mA
IC=20mA, IB=2mA
IC=30mA, IB=3mA
VCE=10V, IC=100mA
VCE=10V, IC=1mA
VCE=10V,IC=10mA
VCE=10V,IC=30mA
VCE=10V,IC=50mA
VCE=10V,IC=100mA
VCE=20V, IC=10mA, f=20MHz
VCB=20V, IE=0A,f=1MHz
*Pulse Test: Pulse Width ≤380us, Duty Cycle≤2%
BTN6517A3
CYStek Product Specification