BTN6517A3 Datasheet, PDF (1/4 Pages) Cystech Electonics Corp. – High Voltage NPN Epitaxial Planar Transistor

CYStech Electronics Corp.
High Voltage NPN Epitaxial Planar Transistor
Spec. No. : C231A3
Issued Date : 2003.04.12
Revised Date :
Page No. : 1/4
BTN6517A3
Features
• High Breakdown Voltage:BVCEO≥350V
• Complementary to BTP6520A3
Symbol
BTN6517A3
TO-92
B：Base
C：Collector
E：Emitter
Absolute Maximum Ratings (Ta=25°C)
Parameter
Symbol
Limits
Unit
Collector-Base Voltage
VCBO
350
V
Collector-Emitter Voltage
VCEO
350
V
Emitter-Base Voltage
VEBO
6
V
Collector Current---continuous
IC
500
mA
Power Dissipation @TA=25℃
Pd
625
mW
Junction Temperature
Tj
150
°C
Storage Temperature
Tstg
-55~+150
°C
BTN6517A3
CYStek Product Specification