BTN5551N3 Datasheet, PDF (2/4 Pages) Cystech Electonics Corp. – General Purpose NPN Epitaxial Planar Transistor

CYStech Electronics Corp.
Spec. No. : C208N3-H
Issued Date : 2003.06.06
Revised Date :
Page No. : 2/4
Characteristics (Ta=25°C)
Symbol
Min.
Typ.
Max.
Unit
Test Conditions
BVCBO
180
-
-
V
IC=100µA
BVCEO
160
-
-
V
IC=1mA
BVEBO
6
-
-
V
IE=10µA
ICBO
-
-
50
nA VCB=120V
IEBO
-
-
50
nA VEB=4V
*VCE(sat)1
-
0.1
0.15
V
IC=10mA, IB=1mA
*VCE(sat)2
-
-
0.2.
V
IC=50mA, IB=5mA
*VBE(sat)1
-
-
1
V
IC=10mA, IB=1mA
*VBE(sat)2
-
-
1
V
IC=50mA, IB=5mA
*hFE1
80
-
-
-
VCE=5V, IC=1mA
*hFE2
80
-
-
-
VCE=5V, IC=10mA
*hFE3
30
-
-
-
VCE=5V, IC=50mA
*hFE4
52
-
390
-
VCE=6V, IC=2mA
fT
100
-
-
MHz VCE=20V, IC=10mA, f=100MHz
Cob
-
-
6
pF VCB=20V, IE=0A,f=1MHz
*Pulse Test: Pulse Width ≤380us, Duty Cycle≤2%
Classification Of hFE4
Rank
Range
K
52~120
P
82~180
Q
120~270
R
180~390
Characteristic Curves
Current Gain vs Collector Current
1000
HFE@VCE=6V
Saturation Voltage vs Collector Current
1000
VCE(SAT)@IC=10IB
100
100
0.1
1
10
100
Collector Current--- IC(mA)
10
0.1
1
10
100
Collector Current ---IC(mA)
BTN5551N3
CYStek Product Specification