BTN5551N3 Datasheet, PDF (1/4 Pages) Cystech Electonics Corp. – General Purpose NPN Epitaxial Planar Transistor

CYStech Electronics Corp.
General Purpose NPN Epitaxial Planar Transistor
Spec. No. : C208N3-H
Issued Date : 2003.06.06
Revised Date :
Page No. : 1/4
BTN5551N3
Description
The BTN5551N3 is designed for general purpose applications requiring high breakdown voltage.
Features
• High collector-emitter breakdown voltage. (BVCEO=160V @ IC=1mA)
• Complement to BTP5401N3
Symbol
BTN5551N3
Outline
SOT-23
B：Base
C：Collector
E：Emitter
Absolute Maximum Ratings (Ta=25°C)
Parameter
Symbol
Limits
Unit
Collector-Base Voltage
VCBO
180
V
Collector-Emitter Voltage
VCEO
160
V
Emitter-Base Voltage
VEBO
6
V
Collector Current
IC
600
mA
Power Dissipation
Pd
225
mW
Junction Temperature
Tj
150
°C
Storage Temperature
Tstg
-55~+150
°C
BTN5551N3
CYStek Product Specification