BTN3A60T3 Datasheet, PDF (2/4 Pages) Cystech Electonics Corp. – High Voltage NPN Triple Diffusion Planar Transistor

CYStech Electronics Corp.
Spec. No. : C810T3
Issued Date : 2007.12.05
Revised Date :
Page No. : 2/4
Characteristics (Ta=25°C)
Symbol
BVCBO
BVCEO
BVEBO
ICEO
ICBO
IEBO
*VCE(sat)
hFE
fT
Min.
900
700
9
-
-
-
-
10
-
Typ.
Max.
Unit
Test Conditions
-
-
V
IC=50μA, IE=0
-
-
V
IC=1mA, IB=0
-
-
V
IE=50μA, IC=0
-
10
μA VCB=700V, IE=0
-
10
μA VCB=900V, IE=0
-
10
μA VEB=7V, IC=0
-
0.6
V
IC=0.5A, IB=0.25A
-
40
-
VCE=5V, IC=0.2A
4
-
MHz VCE=10V, IC=100mA, f=1MHz
*Pulse Test : Pulse Width ≤380μs, Duty Cycle≤2%
BTN3A60T3
CYStek Product Specification