BTN3A60T3 Datasheet, PDF (1/4 Pages) Cystech Electonics Corp. – High Voltage NPN Triple Diffusion Planar Transistor

CYStech Electronics Corp.
High Voltage NPN Triple Diffusion Planar Transistor
BTN3A60T3
Spec. No. : C810T3
Issued Date : 2007.12.05
Revised Date :
Page No. : 1/4
Features
• High breakdown voltage. (BVCEO =700V)
• High collector current capability (IC(max)=3A)
Symbol
BTN3A60T3
Outline
TO-126
B：Base
C：Collector
E：Emitter
Absolute Maximum Ratings (Ta=25°C)
Parameter
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current (DC)
Power Dissipation (TA=25℃)
Power Dissipation (TC=25℃)
Junction Temperature
Storage Temperature
Symbol
VCBO
VCEO
VEBO
IC
PD
Tj
Tstg
BTN3A60T3
BCE
Limit
Unit
900
V
700
V
9
V
3
A
1.2
W
40
150
°C
-55~+150
°C
CYStek Product Specification