BTD965N3 Datasheet, PDF (2/6 Pages) Cystech Electonics Corp. – Low Vcesat NPN Epitaxial Planar Transistor

CYStech Electronics Corp.
Spec. No. : C847N3
Issued Date : 2003.07.02
Revised Date :2013.01.03
Page No. : 2/6
Characteristics (Ta=25°C)
Symbol
Min.
Typ.
BVCEO
20
-
BVEBO
7
-
ICBO
-
-
ICEO
-
-
IEBO
-
-
*VCE(sat)
-
0.35
*hFE1
230
-
*hFE2
150
-
fT
-
150
Cob
-
-
Max.
-
-
0.1
1
0.1
1.0
800
-
-
50
Unit
V
V
μA
μA
μA
V
-
-
MHz
pF
Test Conditions
IC=1mA, IB=0
IE=10μA, IC=0
VCB=10V, IE=0
VCB=10V, IE=0
VEB=7V,IC=0
IC=3A, IB=0.1A
VCE=2V, IC=500mA
VCE=2V, IC=2.00A
VCE=6V, IE=50mA, f=200MHz
VCB=20V, IE=0A, f=1MHz
*Pulse Test : Pulse Width ≤380μs, Duty Cycle≤2%
Classification Of hFE1
Rank
Range
Q
230~380
R
340~600
S
400~800
Ordering Information
Device
HFE Rank
BTD965N3-Q-T1-G
Q
BTD965N3-R-T1-G
R
BTD965N3-S-T1-G
S
Package
SOT-23 (Pb-free lead plating
and halogen-free package)
SOT-23 (Pb-free lead plating
and halogen-free package)
SOT-23 (Pb-free lead plating
and halogen-free package)
Shipping
3000 pcs / Tape & Reel
3000 pcs / Tape & Reel
3000 pcs / Tape & Reel
BTD2098N3
CYStek Product Specification