BTD965N3 Datasheet, PDF (1/6 Pages) Cystech Electonics Corp. – Low Vcesat NPN Epitaxial Planar Transistor

CYStech Electronics Corp.
Low Vcesat NPN Epitaxial Planar Transistor
BTD965N3
Spec. No. : C847N3
Issued Date : 2003.07.02
Revised Date :2013.01.03
Page No. : 1/6
Features
• Low VCE(sat), VCE(sat)=0.35 V (typical), at IC / IB = 3A / 0.1A
• Excellent DC current gain characteristics
• Complementary to BTB1386N3
Symbol
BTD965N3
Outline
SOT-23
B：Base
C：Collector
E：Emitter
Absolute Maximum Ratings (Ta=25°C)
Parameter
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current (DC)
Collector Current (Pulse)
Power Dissipation
Thermal Resistance, Junction to Ambient
Junction Temperature
Storage Temperature
Note : Single Pulse Pw≦350μs, Duty≦2%.
Symbol
VCBO
VCEO
VEBO
IC
ICP
Pd
RθJA
Tj
Tstg
BTD2098N3
Limits
40
20
7
5
8 (Note )
225
556
150
-55~+150
Unit
V
V
V
A
A
mW
°C/W
°C
°C
CYStek Product Specification