BTD882T3 Datasheet, PDF (2/4 Pages) Cystech Electonics Corp. – Low Vcesat NPN Epitaxial Planar Transistor

CYStech Electronics Corp.
Spec. No. : C848T3-H
Issued Date : 2002.08.18
Revised Date : 2005.09.16
Page No. : 2/4
Characteristics (Ta=25°C)
Symbol
BVCBO
BVCEO
BVEBO
ICBO
IEBO
*VCE(sat)
*VBE(sat)
*hFE1
*hFE2
fT
Cob
Min.
Typ.
40
-
30
-
5
-
-
-
-
-
-
0.25
-
-
52
-
100
-
-
90
-
45
Classification Of hFE 2
Rank
Range
Q
100~200
Max.
-
-
-
1
1
0.5
2
-
500
-
-
Unit
Test Conditions
V
V
V
µA
µA
V
V
-
-
MHz
pF
IC=50µA, IE=0
IC=1mA, IB=0
IE=50µA, IC=0
VCB=50V, IE=0
VEB=3V, IC=0
IC=2A, IB=0.2A
IC=2A, IB=0.2A
VCE=2V, IC=20mA
VCE=2V, IC=1A
VCE=5V, IC=0.1A, f=100MHz
VCB=10V, f=1MHz
*Pulse Test : Pulse Width ≤380µs, Duty Cycle≤2%
P
160~320
E
250~500
Ordering Information
Device
BTB882T3
BTB882T3S
Package
TO-126
TO-126
(Pb-free)
Shipping
500 pcs / bag
500 pcs / bag
BTD882T3/S
CYStek Product Specification