BTD882T3 Datasheet, PDF (1/4 Pages) Cystech Electonics Corp. – Low Vcesat NPN Epitaxial Planar Transistor

CYStech Electronics Corp.
Low Vcesat NPN Epitaxial Planar Transistor
BTD882T3/S
Spec. No. : C848T3-H
Issued Date : 2002.08.18
Revised Date : 2005.09.16
Page No. : 1/4
Features
• Low VCE(sat), typically 0.25V at IC / IB = 2A / 0.2A
• Excellent current gain characteristics
• Complementary to BTB772T3/S
• Pb-free package is available
Symbol
BTD882T3
Outline
TO-126
B：Base
C：Collector
E：Emitter
Absolute Maximum Ratings (Ta=25°C)
Parameter
Symbol
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Power Dissipation
VCBO
VCEO
VEBO
IC(DC)
IC(Pulse)
Pd(Ta=25℃)
Pd(Tc=25℃)
Junction Temperature
Tj
Storage Temperature
Note : *1. Single Pulse Pw≦350µs,Duty≦2%.
Tstg
BTD882T3/S
ECB
Limit
Unit
40
V
30
V
5
V
3
A
7
*1
A
1
W
10
150
°C
-55~+150
°C
CYStek Product Specification