BTD8530F3 Datasheet, PDF (2/6 Pages) Cystech Electonics Corp. – NPN Epitaxial Planar Transistor

CYStech Electronics Corp.
Spec. No. : C603F3
Issued Date : 2010.06.30
Revised Date : 2010.10.07
Page No. : 2/6
Thermal Data
Parameter
Thermal Resistance, Junction-to-case, max
Thermal Resistance, Junction-to-ambient, max
Symbol
Rth,j-c
Rth,j-a
Value
1.25
62.5
Unit
°C/W
°C/W
Characteristics (Ta=25°C)
Symbol
BVCBO
BVCEO
ICEO
ICBO
IEBO
*VCE(sat) 1
*VCE(sat) 2
*VCE(sat) 3
*VBE(sat)
*VBE(on)
*hFE 1
*hFE 2
*hFE 3
Min.
250
250
-
-
-
-
-
-
-
-
1500
2000
1500
Typ.
-
-
-
-
-
-
-
-
-
-
-
-
-
Max.
-
-
100
100
2
1
1.2
1.5
1.8
1.8
-
-
-
Unit
Test Conditions
V
IC=100μA, IE=0
V
IC=1mA, IB=0
μA VCE=250V, IE=0
μA VCB=220V, IE=0
mA VEB=5V, IC=0
V
IC=5A, IB=7mA
V
IC=6A, IB=5mA
V
IC=10A, IB=12.5mA
V
IC=5A, IB=15mA
V
VCE=4V, IC=8A
-
VCE=2V, IC=2A
-
VCE=4V, IC=5A
-
VCE=5V, IC=10A
*Pulse Test : Pulse Width ≤380μs, Duty Cycle≤2%
Ordering Information
Device
BTD8530F3
Package
TO-263
(Pb-free lead plating)
Shipping
800 pcs / Tape & Reel
Typical Characteristics
100000
Current Gain vs Collector Current
HFE
VCE=4V
10000
1000
VCE=2V
100
0.1
1
10
100
Collector Current---IC(A)
10000
1000
Saturation Voltage vs Collector Current
VCESAT
IC=1200IB
IC=800IB
100
0.1
1
10
100
Collector Current ---IC(A)
BTD8530F3
CYStek Product Specification