BTD8530F3 Datasheet, PDF (1/6 Pages) Cystech Electonics Corp. – NPN Epitaxial Planar Transistor

CYStech Electronics Corp.
NPN Epitaxial Planar Transistor
BTD8530F3
Spec. No. : C603F3
Issued Date : 2010.06.30
Revised Date : 2010.10.07
Page No. : 1/6
Description
The BTD8530F3 is a NPN Darlington transistor, designed for general purpose amplifier and low speed
switching application.
Features:
•High BVCEO
•Low VCE(SAT)
•High current gain
•Monolithic construction with built-in base-emitter shunt resistors
•Pb-free lead plating package
Equivalent Circuit
BTD8530F3
C
B
R1≈4k R2≈60
B：Base
E
C：Collector
E：Emitter
Outline
TO-263
BCE
Absolute Maximum Ratings (Ta=25°C)
Parameter
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Power Dissipation
Operating Junction Temperature Range
Storage Temperature Range
Note : *1. Single Pulse Pw=300μs
Symbol
VCBO
VCEO
VEBO
IC(DC)
IC(Pulse)
Pd(TA=25℃)
Pd(TC=25℃)
Tj
Tstg
BTD8530F3
Limits
Unit
250
V
250
V
10
V
10
15 *1
A
2
W
100
-55~+150
°C
-55~+150
°C
CYStek Product Specification