BTD2444N3 Datasheet, PDF (2/4 Pages) Cystech Electonics Corp. – Low Vcesat NPN Epitaxial Planar Transistor

CYStech Electronics Corp.
Spec. No. : C223N3
Issued Date : 2003.05.26
Revised Date : 2005.06.28
Page No. : 2/4
Characteristics (Ta=25°C)
Symbol
Min.
Typ.
Max.
Unit
Test Conditions
BVCBO
40
-
-
V
IC=100µA, IE=0
BVCEO
25
-
-
V
IC=2mA, IB=0
BVEBO
6
-
-
V
IE=100µA, IC=0
ICBO
-
-
0.5
µA VCB=30V, IE=0
IEBO
-
-
0.5
µA VEB=6V, IC=0
*VCE(sat)1
-
40
60
mV IC=50mA, IB=2.5mA
*VCE(sat)1
-
0.15
0.3
V
IC=400mA, IB=20mA
*VCE(sat)2
-
0.25
0.5
V
IC=800mA, IB=80mA
*VBE(on)
-
-
1
V
VCE=1V, IC=10mA
*hFE1
180
-
560
-
VCE=1V, IC=100mA
*hFE2
40
-
-
-
VCE=1V, IC=600mA
fT
-
150
-
MHz VCE=5V, IC=50mA, f=100MHz
Cob
-
15
-
pF VCB=10V, f=1MHz
*Pulse Test : Pulse Width ≤380µs, Duty Cycle≤2%
Ordering Information
Device
BTD2444N3
Package
SOT-23
(Pb-free)
Shipping
3000 pcs / Tape & Reel
Marking
BS
BTD2444N3
CYStek Product Specification