BTD2444N3 Datasheet, PDF (1/4 Pages) Cystech Electonics Corp. – Low Vcesat NPN Epitaxial Planar Transistor

CYStech Electronics Corp.
Low Vcesat NPN Epitaxial Planar Transistor
BTD2444N3
Spec. No. : C223N3
Issued Date : 2003.05.26
Revised Date : 2005.06.28
Page No. : 1/4
Features
• The BTD2444N3 is designed for general purpose low frequency power amplifier applications.
• Low VCE(sat), VCE(sat)=40mV (typical), at IC / IB = 50mA / 2.5mA
• Complementary to BTB1590N3
• Pb-free package
Symbol
BTD2444N3
Outline
SOT-23
B：Base
C：Collector
E：Emitter
Absolute Maximum Ratings (Ta=25°C)
Parameter
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current (DC)
Collector Current (Pulse)
Power Dissipation
Junction Temperature
Storage Temperature
Note : Single pulse, Pw=10ms
Symbol
VCBO
VCEO
VEBO
IC
ICP
Pd
Tj
Tstg
BTD2444N3
Limits
Unit
40
V
25
V
6
V
800
mA
1.5 (Note)
A
225
mW
150
°C
-55~+150
°C
CYStek Product Specification