BTD2195T3 Datasheet, PDF (2/6 Pages) Cystech Electonics Corp. – NPN Epitaxial Planar Transistor

CYStech Electronics Corp.
Spec. No. : C654T3
Issued Date : 2010.09.21
Revised Date :
Page No. : 2/6
Characteristics (Ta=25°C)
Symbol
BVCEO
BVCBO
ICBO
ICEO
IEBO
*VCE(sat)
*VBE(on)
*hFE1
*hFE2
Cob
Min.
120
130
-
-
-
-
1000
1000
-
Typ.
Max.
Unit
Test Conditions
-
-
V
IC=1mA, IB=0
-
-
V
IC=100μA, IE=0
-
10
μA VCB=100V, IE=0
-
10
μA VCE=100V, IB=0
-
2
mA VEB=5V, IC=0
-
1.5
V
IC=2A, IB=2mA
2
V
VCE=4V, IC=2A
-
-
-
VCE=4V, IC=1A
-
-
-
VCE=4V, IC=2A
200
pF VCB=10V, IE=0A, f=1MHz
*Pulse Test : Pulse Width ≤380μs, Duty Cycle≤2%
Ordering Information
Device
BTD2195T3
Package
TO-126
(Pb-free lead plating)
Shipping
200 pcs / bag, 15 bags/box, 10 boxes/carton
Marking
D2195
BTD2195T3
CYStek Product Specification