BTD2195T3 Datasheet, PDF (1/6 Pages) Cystech Electonics Corp. – NPN Epitaxial Planar Transistor

CYStech Electronics Corp.
NPN Epitaxial Planar Transistor
BTD2195T3
BVCEO
IC
VCE(SAT)
Spec. No. : C654T3
Issued Date : 2010.09.21
Revised Date :
Page No. : 1/6
120V
4A
1.5V(max)
Description
The BTD2195T3 is designed for use in general purpose amplifier and low speed switching application.
Pb-free lead plating package process is adopted.
Equivalent Circuit
BTD2195T3
C
B
Outline
TO-126
R1≒8K R2≒120 E
B：Base
C：Collector
E：Emitter
ECB
Absolute Maximum Ratings (Ta=25°C)
Parameter
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current (DC)
Collector Current (Pulse)
Power Dissipation
TA=25°C
TC=25°C
Thermal Resistance, Junction to Ambient
Thermal Resistance, Junction to Case
Operating Junction Temperature Range
Storage Temperature Range
Note : 1. Single Pulse Pw≦300μs, Duty≦2%.
Symbol
VCBO
VCEO
VEBO
IC
ICP
PD
RθJA
RθJC
Tj
Tstg
Limits
130
120
5
4
6 (Note 1)
1.25
40
100
3.13
-55~+150
-55~+150
Unit
V
A
W
°C/W
°C
BTD2195T3
CYStek Product Specification