BTD2195M3 Datasheet, PDF (2/4 Pages) Cystech Electonics Corp. – NPN Epitaxial Planar Transistor

CYStech Electronics Corp.
Spec. No. : C654M3
Issued Date : 2003.07.16
Revised Date :2005.03.11
Page No. : 2/4
Characteristics (Ta=25°C)
Symbol
BVCEO
BVCBO
ICBO
ICEO
IEBO
*VCE(sat)
*VBE(on)
*hFE1
*hFE2
Cob
Min.
120
130
-
-
-
-
1000
500
-
Typ.
Max.
Unit
Test Conditions
-
-
V
IC=1mA, IB=0
-
-
V
IC=100µA, IE=0
-
1
mA VCB=100V, IE=0
-
2
mA VCE=50V, IB=0
-
2
mA VEB=5V, IC=0
-
1.2
V
IC=2A, IB=2mA
2.8
V
VCE=4V, IC=2A
-
-
-
VCE=4V, IC=1A
-
-
-
VCE=4V, IC=2A
200
pF VCB=10V, IE=0A, f=1MHz
*Pulse Test : Pulse Width ≤380µs, Duty Cycle≤2%
BTD2195M3
CYStek Product Specification