BTD2195M3 Datasheet, PDF (1/4 Pages) Cystech Electonics Corp. – NPN Epitaxial Planar Transistor

CYStech Electronics Corp.
NPN Epitaxial Planar Transistor
BTD2195M3
Spec. No. : C654M3
Issued Date : 2003.07.16
Revised Date :2005.03.11
Page No. : 1/4
Description
The BTD2195M3 is designed for use in general purpose amplifier and low speed switching
application.
Equivalent Circuit
BTD2195M3
C
B
Outline
SOT-89
E
B：Base
C：Collector
E：Emitter
BCE
Absolute Maximum Ratings (Ta=25°C)
Parameter
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current (DC)
Collector Current (Pulse)
Symbol
VCBO
VCEO
VEBO
IC
ICP
Power Dissipation
Pd
Thermal Resistance, Junction to Ambient
RθJA
Junction Temperature
Tj
Storage Temperature
Tstg
Note : 1. Single Pulse Pw≦350µs, Duty≦2%.
2. When mounted on a FR-4 PCB with area measuring 10×10×1 mm.
3. When mounted on a ceramic board with area measuring 40×40×1mm.
BTD2195M3
Limits
130
120
5
4
6 (Note 1)
0.6
1 (Note 2)
2 (Note 3)
208
125 (Note 2)
62.5 (Note 3)
150
-55~+150
Unit
V
V
V
A
A
W
W
W
°C/W
°C/W
°C/W
°C
°C
CYStek Product Specification