BTD2195J3 Datasheet, PDF (2/6 Pages) Cystech Electonics Corp. – NPN Epitaxial Planar Transistor

CYStech Electronics Corp.
Spec. No. : C654J3
Issued Date : 2004.03.18
Revised Date :2009.02.04
Page No. : 2/6
Characteristics (Ta=25°C)
Symbol
BVCEO
BVCBO
ICBO
ICEO
IEBO
*VCE(sat)
*VCE(sat)
*VBE(on)
*hFE1
*hFE2
*hFE3
Cob
Min.
120
130
-
-
-
-
-
600
1000
300
-
Typ.
Max.
Unit
Test Conditions
-
-
V
IC=1mA, IB=0
-
-
V
IC=100μA, IE=0
-
1
mA VCB=100V, IE=0
-
2
mA VCE=50V, IE=0
-
2
mA VEB=5V, IC=0
-
1.25
V
IC=2A, IB=8mA
-
1.5
V
IC=2A, IB=2mA
2.2
V
VCE=4V, IC=2A
-
-
-
VCE=3V, IC=1A
-
-
-
VCE=3V, IC=2A
-
-
-
VCE=3V, IC=4A
200
pF VCB=10V, IE=0A, f=1MHz
*Pulse Test : Pulse Width ≤380μs, Duty Cycle≤2%
Ordering Information
Device
BTD2195J3
Package
TO-252
(RoHS compliant)
Shipping
2500 pcs / Tape & Reel
Marking
D2195
BTD2195J3
CYStek Product Specification