BTD2195J3 Datasheet, PDF (1/6 Pages) Cystech Electonics Corp. – NPN Epitaxial Planar Transistor

CYStech Electronics Corp.
Spec. No. : C654J3
Issued Date : 2004.03.18
Revised Date :2009.02.04
Page No. : 1/6
NPN Epitaxial Planar Transistor
BTD2195J3
Description
BVCEO
IC
RCESAT
120V
4A
600mΩ
The BTD2195J3 is a NPN Darlington transistor, designed for use in general purpose amplifier and low
speed switching application. RoHS compliant package process is adopted.
Equivalent Circuit
BTD2195J3
C
B
Outline
TO-252
E
B：Base
C：Collector
E：Emitter
BCE
Absolute Maximum Ratings (Ta=25°C)
Parameter
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current (DC)
Collector Current (Pulse)
Power Dissipation
Thermal Resistance, Junction to Ambient
Thermal Resistance, Junction to Case
Junction Temperature
Storage Temperature
Note : Single Pulse Pw≦350μs, Duty≦2%.
Symbol
VCBO
VCEO
VEBO
IC
ICP
Pd(TA=25℃)
Pd(TC=25℃)
RθJA
RθJC
Tj
Tstg
Limits
130
120
5
4
6 (Note )
1.5
20
83.3
6.25
150
-55~+150
Unit
V
V
V
A
A
W
W
°C/W
°C/W
°C
°C
BTD2195J3
CYStek Product Specification