BTD2098M3 Datasheet, PDF (2/4 Pages) Cystech Electonics Corp. – Low Vcesat NPN Epitaxial Planar Transistor

CYStech Electronics Corp.
Spec. No. : C847M3
Issued Date : 2003.04.17
Revised Date :
Page No. : 2/4
Characteristics (Ta=25°C)
Symbol
Min.
BVCBO
40
BVCEO
20
BVEBO
6
ICBO
-
IEBO
-
*VCE(sat)
-
*hFE
120
fT
-
Cob
-
Typ.
-
-
-
-
-
0.25
-
150
30
Max.
-
-
-
0.5
0.5
1.0
820
-
50
Unit
Test Conditions
V
V
V
uA
uA
V
-
MHz
pF
IC=50uA, IE=0
IC=1mA, IB=0
IE=50uA, IC=0
VCB=40V. IE=0
VEB=5V,IC=0
IC=3A, IB=0.1A
VCE=2V, IC=500mA
VCE=6V, IC=50mA, f=100MHz
VCB=20V, IE=0A, f=1MHz
*Pulse Test : Pulse Width ≤380us, Duty Cycle≤2%
Classification Of hFE
Rank
Range
Q
120~270
R
180~390
S
270~560
T
390~820
Characteristic Curves
Current Gain vs Collector Current
1000
HFE@VCE=2V
100
1
10
100
1000
Collector Current---IC(mA)
10000
Saturation Voltage vs Collector Current
1000
VCESAT@IC=20IB
100
10
1
0.1
1
10 100 1000 10000
Collector Current---IC(mA)
BTD2098M3
CYStek Product Specification